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APTGT150DH120G
Asymmetrical - Bridge Fast Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 CR3
VCES = 1200V IC = 150A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Fast Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant
E1
OUT1 OUT2
Q4 G4 CR2 E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS
E4 G4 OUT2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Reverse Bias Safe Operating Area
300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-5
APTGT150DH120G - Rev 1
July, 2006
Max ratings 1200 220 150 350 20 690
Unit V A V W
APTGT150DH120G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 350 2.1 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A R G = 2.2 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C R G = 2.2
Min
Typ 10.7 0.56 0.48 280 40 420 75 290 45 520 90 14
Max
Unit nF
ns
ns
mJ 16
Diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Min 1200
Typ
Max 250 600
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
VR=1200V
IF = 150A
150 1.6 1.6 170 280 14 28 6 11
2.1
V ns
July, 2006 2-5 APTGT150DH120G - Rev 1
IF = 150A VR = 600V
di/dt =2500A/s
C mJ
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APTGT150DH120G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.18 0.30 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGT150DH120G - Rev 1
July, 2006
APTGT150DH120G
Typical Performance Curve
300 250
IC (A) Output Characteristics (VGE=15V) Output Characteristics 300 TJ = 125C
T J=25C
250
TJ=125C
VGE =17V
V GE=13V VGE =15V V GE=9V
200
IC (A)
200 150 100 50 0
150 100 50 0 0 1 2 VCE (V) 3 4
0
1
2 V CE (V)
3
4
300 250 200 IC (A) 150 100 50 0 5
Transfert Characteristics 32
T J=25C T J=125C
Energy losses vs Collector Current 28 24 E (mJ) 20 16 12 8 4 0 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 250 IC (A)
Eoff Er V CE = 600V V GE = 15V RG = 2.2 T J = 125C
Eoff
Eon
T J=125C
6
7
8 9 VGE (V)
10
11
12
200
250
300
Switching Energy Losses vs Gate Resistance 34 30 26 E (mJ) 22 18 14 10 6 2 0 2 4 6 8 10 12 14 Gate Resistance (ohms) 16 18
Eon Er VCE = 600V VGE =15V IC = 150A TJ = 125C Eon
200 150 100 50 0 0 400 800 V CE (V) 1200 1600
V GE=15V T J=125C RG=2.2
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 Thermal Impedance (C/W) 0.9 0.16 0.12 0.5 0.08 0.04 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 IGBT
0.05 0 0.00001
rectangular Pulse Duration (Seconds)
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4-5
APTGT150DH120G - Rev 1
July, 2006
APTGT150DH120G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0
Hard switching ZCS ZVS VCE =600V D=50% RG=2.2 T J=125C T c=75C
Forward Characteristic of diode 300 250 200 IF (A) 150 100 50 0
TJ =125C T J=125C T J=25C
40
80
120 IC (A)
160
200
240
0
0.4
0.8
1.2 1.6 V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT150DH120G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
July, 2006

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